The minimum base current and the input voltage at which the transistor will go to saturation…?.

An n−p−n transistor has three leads A,B and C.

Identify the correct output signal Y in the given combination of gates…?.

A common emitter amplifier circuit, built using an npn transistor, is shown in the figure…?.

The P-n junction can be used as a solar cell. In LED, the p-n junction can be used when it's forward biased.

Based on the voltage applied, there are 3 biasing conditions of a p-n junction Forward Bias, Reverse Bias, Zero Bias.

The method of doping is used as if the semiconductor is formed by combining different semiconductor materials The p-n junction in a semiconductor is formed by the doping method.The positive side of the semiconductor, which is the p side, has an excess of holes while the negative side of the semiconductor, which is the n side, has an excess of electrons.An interface or a boundary that is between p-type and n-type, the two types of semiconductor material, is known as a p-n junction.Read More Articles on Topics from Clas 12 Semiconductor Electronics Chapter When reverse biased, the p-n junction is used as a photodiode.In LED, the p-n junction can be used when it's forward biased.When forward biased, PN junctions is can be used in LED lights.PN junction can be used as a solar cell.PN junction is used in many semiconductor electronics.N D and N A are the concentrations of impurity V T is the thermal voltage at room temperature of 26mV Zero Bias: When no external voltage is applied to the p-n junction, it is zero biased.The depletion region thus becomes thicker and more resistive. The resulting field is thus in the same direction as the built-in electric field.

Here, the applied electric field and the built-in electric field, both are in the same direction. Reverse Bias: When the positive terminal of the battery is connected to the n side of the junction and the negative terminal is connected to the p side of the junction, the p-n junction is reverse biased.The depletion region thus becomes thin and less resistive. The resulting field is thus less than the electric field that is built-in. Here, the applied electric field and the built-in electric field, both are in opposite directions. Forward Bias: When the positive terminal of the battery is connected to the p side of the junction and the negative terminal is connected to the n side of the junction, the p-n junction is forward biased.Read More on Concepts Related to PN Junctionīased on the voltage applied, there are 3 biasing conditions of a p-n junction The direction of diffusion and drift current is opposite to each other.Therefore, it leads to the development of an electric field due to which an electron that is on the p side of the junction moves to the n side.The region with both negative and positive that is on both sides of the junction is called the depletion region.Due to the continuation of the process, on the n side of the junction, a positive charge layer is developed.Similarly, as the electrons from the n side diffuse to the p side, there is an immobile ionized donor which is left behind on the n side.Hence, a layer of negative charge develops on the p side of the junction.As the holes from the p side diffuse to the n side, there is an ionized acceptor that is left behind on the p side.Therefore, across the junction, there is a diffusion current.Similarly, the holes that are in the p-side diffuse to the n-side.Due to the difference of electrons at one side of the junction and the concentration of holes at another, the electrons from the n side diffuse to the p side.After that, the processes of diffusion and drift take place.The wafer now has both p and n-type regions which are separated by an interface or a junction.Now, as a small amount of pentavalent impurity is added to the semiconductor wafer, it turns to be n-type silicon.Consider there is a thin Silicon semiconductor of p-type.The process of doping could be understood as. Grain boundary will scatter the holes and electrons and will stop the movement of electrons from one side to another side.The method of doping is used because if the semiconductor is formed by combining different semiconductor materials, it will result in the creation of a grain boundary.

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